cystech electronics corp. spec. no. : c 016j3 issued date : 20 18 . 0 5 . 24 revised date : page no. : 1 / 8 mtb010n06r i 3 cyste k product specification n - channel enhancement mode power mosfet mtb010n06r i 3 features ? low on resistance ? simple drive requirement ? low gate charge ? fast switching characteristic ? pb - free lead plating and halogen - free package symbol outline o rdering inf ormation device package shipping mtb0 10 n06 r i3 - 0 - ua - g t o - 251 (pb - free lead plating and halogen - free package) 80 pcs/tube, 50 tubes/box to - 251 mtb010n06r i 3 g gate d drain s source bv dss 60v i d @v gs =10v, t c =25 c 43a r ds(on) @v gs =10v, i d =20a 10. 7 m (typ) r ds(on) @v gs =4.5v, i d =20a 1 6 . 9 m (typ) g d s environment friendly grade : s for rohs compliant products, g for rohs compliant and gr een compound products packing spec, ua: 80 pcs / tube, 50 tubes/box product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c 016j3 issued date : 20 18 . 0 5 . 24 revised date : page no. : 2 / 8 mtb010n06r i 3 cyste k product specification absolute maximum ratings (t c =25 ? c) parameter symbol limits unit drain - sour c e voltage (note 1) v ds 60 v gate - source voltage v gs 20 continuous drain current @t c =25 ? c , v gs =10v (note 1) i d 43 a continuous drain current @t c =100 ? c , v gs =10v (note 1) 30.4 continuous drain current @t a =25 ? c , v gs =10v (note 4) i dsm 9.8 continuous drain current @t a =70 ? c , v gs =10v (note 4) 7.8 pulsed drain current @ v gs =10v (note 3) i dm 172 avalanche current (note 3) i as 32 single pulse avalan che energy @ l=0.1mh, i d =32a, v dd =30v (note 2&5) e as 51 mj repetitive avalanche energy (note 3) e ar 5 power dissipation t c =25 ? c (note 1) p d 50 w t c =100 ? c (note 1) 25 t a =25 ? c (note 4) p dsm 3 t a =70 ? c (note 4) 0.96 operating junction and s torage temperature tj, tstg - 55~+1 75 ? c thermal data parameter symbol value unit thermal resistance, junction - to - case, max r jc 3 ? c /w thermal resistance, junction - to - ambient, max r ja 50 (note 4) 110 note : 1 . the power dissipation p d is based on t j(max) =175 c, using junction - to - case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2 . the power dissipation p dsm is based on r ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user s specific board design. 3 . repetitive rating, pulse width limited by junction temperature t j(max) =175 c. ratings are based on low frequency and low duty cycles to keep initial t j =25 c. 4. when the device is mounted on 1 in 2 fr - 4 board with 2 oz. copper, in a still air environment with t a =25 c. the value in any given application depends on the user s specific board design. 5. 100% tested by conditions of l=0.1mh, v gs =10v, i as =10a, v dd =30v
cystech electronics corp. spec. no. : c 016j3 issued date : 20 18 . 0 5 . 24 revised date : page no. : 3 / 8 mtb010n06r i 3 cyste k product specification characteris tics (t j =25 ? symbol min. typ. max. unit test conditions static bv dss 60 - - v v gs = 0v , i d = 250 a ? bv dss / ? tj - 0.04 - v/ ? c reference to 25 ? c , i d =250 a v gs(th) 1.0 - 2.5 v v ds = v gs , i d = 250 a *g fs - 1 0.2 - s v ds = 10v , i d = 5a i gss - - 100 n a v gs = 20v, v ds =0v i dss - - 1 a v ds = 48v, v gs =0v - - 10 v ds = 48v, v gs =0v, tj=125 ? c *r ds ( on ) - 10. 7 1 4.5 m v gs = 10v , i d = 20a - 1 6 .9 2 4.5 v gs = 4.5v , i d = 20a dynamic *qg - 25. 9 - nc v dd =48v, i d = 1 5 a,v gs =10v *qgs - 5. 1 - *qgd - 4. 6 - *t d(on) - 1 3 - ns v dd =30v, i d = 1 5 a, v gs =10v, r g = 6 *tr - 14. 2 - *t d(off) - 4 2 .2 - *t f - 8 - ciss - 15 5 7 - pf v gs =0v, v ds =30v, f=1mhz co ss - 1 7 9 - crss - 2 7 - rg - 1.5 - f=1mhz source - drain diode *i s - - 43 a *i sm - - 172 *v sd - 0.74 1 v i s =1a, v gs =0v *trr - 1 6 .8 - ns v gs =0 v , i f =1 5 a, di f /dt=100a/ s *qrr - 1 0 .4 - nc *pulse test : pulse width ? 3 0 0s, duty cycle ? 2%
cystech electronics corp. spec. no. : c 016j3 issued date : 20 18 . 0 5 . 24 revised date : page no. : 4 / 8 mtb010n06r i 3 cyste k product specification typical characteristics typical output characteristics 0 30 60 90 120 150 0 1 2 3 4 5 6 7 8 9 10 v ds , drain-source voltage(v) i d , drain current (a) 10v,9v,8v,7v,6v v gs =3v 3.5v 4v 5v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 1 10 100 0.01 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =10v v gs =4.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1.0 1.2 0 4 8 12 16 20 i dr , reverse drain current(a) v sd , source-drain voltage(v) tj=25c tj=150c v gs =0v static drain-source on-state resistance vs gate-source voltage 0 10 20 30 40 50 60 70 0 2 4 6 8 10 v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =20a drain-source on-state resistance vs junction tempearture 0.0 0.4 0.8 1.2 1.6 2.0 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =10v, i d =20a r ds(on) @tj=25c : 10.7m typ. v gs =4.5v, i d =20a r ds(on) @tj=25c : 16.9mtyp.
cystech electronics corp. spec. no. : c 016j3 issued date : 20 18 . 0 5 . 24 revised date : page no. : 5 / 8 mtb010n06r i 3 cyste k product specification typical characteristics (cont.) capacitance vs drain-to-source voltage 10 100 1000 10000 0 5 10 15 20 25 30 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a i d =1ma forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 i d , drain current(a) g fs , forward transfer admittance(s) ta=25c pulsed v ds =10v v ds =15v gate charge characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 qg, total gate charge(nc) v gs , gate-source voltage(v) i d =15a v ds =12v v ds =48v maximum safe operating area 0.1 1 10 100 1000 0.1 1 10 100 1000 v ds , drain-source voltage(v) i d , drain current(a) t c =25c, tj=175c v gs =10v, r jc =3c/w single pulse dc 100ms r dson limited 1s 100 s 1ms 10ms maximum drain current vs case temperature 0 5 10 15 20 25 30 35 40 45 50 25 50 75 100 125 150 175 200 t c , case temperature(c) i d , maximum drain current(a) v gs =10v, r jc =3c/w
cystech electronics corp. spec. no. : c 016j3 issued date : 20 18 . 0 5 . 24 revised date : page no. : 6 / 8 mtb010n06r i 3 cyste k product specification typical characteristics (cont.) typical transfer characteristics 0 30 60 90 120 150 0 2 4 6 8 10 v gs , gate-source voltage(v) i d , drain current(a) v ds =10v single pulse power rating, junction to case 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j(max) =175c t c =25c r jc =3c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r jc (t)=r(t)*r jc 2.duty factor, d=t 1 /t 2 3.t jm -t c =p dm *r jc (t) 4.r jc =3c/w
cystech electronics corp. spec. no. : c 016j3 issued date : 20 18 . 0 5 . 24 revised date : page no. : 7 / 8 mtb010n06r i 3 cyste k product specification recommended wave solderi ng condition product peak temperature soldering time pb - free devices 260 +0/ - 5 ? c 5 +1/ - 1 seconds recommended temperature profile for ir reflow profile feature sn - pb eutectic assembly pb - free assembly average ramp - up rate (tsmax to tp) 3 ? c /seco nd max. 3 ? c /second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 ? c 150 ? c 60 - 120 seconds 150 ? c 200 ? c 60 - 180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 ? c 60 - 150 seconds 217 ? c 60 - 150 seconds peak temperature(t p ) 240 +0/ - 5 ? c 260 +0/ - 5 ? c time within 5 ? c of actual peak temperature(tp) 10 - 30 seconds 20 - 40 seconds ramp down rate 6 ? c /second max. 6 ? c /second max. time 25 ? c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of th e package, measured on the package body surface.
cystech electronics corp. spec. no. : c 016j3 issued date : 20 18 . 0 5 . 24 revised date : page no. : 8 / 8 mtb010n06r i 3 cyste k product specification to - 251 dimension dim millimeters inches dim millimeters inches min. max. min. max. min. max. min. max. a 6.40 6.80 0.252 0.268 g 0.50 0.70 0.020 0.028 b 5.20 5.50 0. 205 0.217 h 2.20 2.40 0.087 0.094 c 6.80 7.20 0.268 0.283 j 0.45 0.55 0.018 0.022 d 7.20 7.80 0.283 0.307 k 0.45 0.60 0.018 0.024 e 2.30 ref 0.091 ref l 0.90 1.50 0.035 0.059 f 0.60 0.90 0.024 0.035 m 5.40 5.80 0.213 0.228 notes: 1. controlling dime nsion: millimeters. 2 . maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please contact your local cystek sal es office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v - 0 . important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cyste k . ? cyste k reserves the right to make changes to its products without notice. ? cyste k semiconductor products are not warranted to be suitable for use in life - support applications, or systems. ? cyste k assumes no liability for any consequence of c ustomer product design, infringement of patents, or application assistance. style: pin 1. gate 2. drain 3. source 3 - lead to - 251 plastic package cystek package code: i3 marking: b0 1 0 n06 r product name date code 1 2 3
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